METHOD OF FORMING AN OXIDE LAYER SELECTIVELY

摘要

A method for forming a selective oxide layer is provided to be capable of depositing selectively on a core/peripheral region by maintaining the core/peripheral region to hydrophilicity and a cell region to hydrophobicity. A semiconductor substrate(100) having a topology defined with a cell region and a core/peripheral region is prepared. The surface of the cell region is changed to hydrophobicity by nitrogen treatment. An oxide layer is deposited on the cell region by ALD(Atomic Layer Deposition). Then, an oxide layer is formed selectively on the core/peripheral region. Also, the surface of the cell region is changed to hydrophobicity by AMC(Airborne Molecular Contamination) treatment. Then, the oxide layer is deposited on the cell region by CVD(Chemical Vapor Deposition).