| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to improve a contact characteristic between a bit line and a drain by minimizing loss of a drain contact plug. An interlayer dielectric(22) is formed on a substrate(20). The dielectric layer includes a contact hole for exposing a part of the substrate. A first contact plug(23) is formed to bury a part of the contact hole to the constant height of the interlayer dielectric. A second contact plug(25) is formed on an upper part of the first contact plug to bury the contact hole. An etch ratio of the second contact plug through SF6 gas is lower than an etch ratio of the first contact plug through the SF6 gas. A conductive layer is formed on an upper part of the second contact plug to be electrically connected to the second contact plug.
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