发明名称 DEPOSITION APPARATUS AND DEPOSITION METHOD
摘要 A deposition apparatus for forming a thin film by depositing material particles separated from a deposition material on a deposition object by irradiation with a plasma supplied from a plasma generator into a chamber including a hearth accommodating the deposition material, and a capturing mechanism installed near the hearth and outside the range of a moving region of the material particles moving toward the deposition object. The moving region is determined by a width in an incident direction in which the plasma is incident on the deposition material, and the width of the deposition object 10. The capturing mechanism captures at least some material particles separated from the deposition material and existing outside the range of the moving region.
申请公布号 US2010055348(A1) 申请公布日期 2010.03.04
申请号 US20090619786 申请日期 2009.11.17
申请人 发明人 TAKEYAMA TERUSHIGE;UNEHARA YOSHIFUMI;IGAWA SEIICHI
分类号 C23C16/40;C23C16/513 主分类号 C23C16/40
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