| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve EFH(Effective Field Height) variation of an isolation layer by controlling EFH of the isolation layer with a wet cleaning process. A tunnel dielectric(102) and a charge storing layer are formed on an active region of a semiconductor substrate(100). A trench is formed on an isolation layer of the semiconductor substrate. A first dielectric is formed for a part of the trench to be filled. A second dielectric(114) is formed on a top of the first dielectric for the trench to be filled. The first and second dielectrics are removed, and then remains on a sidewall of the charge storing layer and on a part of the trench. A third dielectric(116) is formed on the top of the first and second dielectrics for a space between the charge storing layers to be filled. The third dielectric is etched, so a height of the third dielectric is lowered.</p> |
