| 摘要 |
A vapor deposition film formation method includes a step for arranging a surface wave generating device (10) using a microwave in a vacuum region, a step for continuously feeding a plastic film substrate (13) into the vacuum region so as to oppose to the surface wave generating device, a step of continuously supplying a reaction gas containing at least organic metal compound into the vacuum region, and a step for executing plasma reaction by the surface wave of the microwave from the surface wave generating device (10), thereby continuously forming a vapor deposition film on the surface of the film substrate (13). This method enables continuous formation of a vapor deposition film on the surface of a film substrate, especially a long film, by the surface wave plasma of the microwave.
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