发明名称 |
Structure and method for manufacturing strained FINFET |
摘要 |
A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel of the FINFET to enhance electron and hole mobility and improve performance. The FINFET has a SiGe/Si stacked gate, and before silicidation the SiGe part of the gate is selectively etched to form a gate gap that makes the gate thin enough to be fully silicidated. After silicidation, the gate-gap is filled with a stress nitride film to create stress in the channel and enhance the performance of the FINFET.
|
申请公布号 |
US7314802(B2) |
申请公布日期 |
2008.01.01 |
申请号 |
US20070669598 |
申请日期 |
2007.01.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DORIS BRUCE B. |
分类号 |
H01L21/336;H01L21/00;H01L21/338;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|