发明名称 |
Closed cell configuration to increase channel density for sub-micron planar semiconductor power device |
摘要 |
A semiconductor power device supported on a semiconductor substrate that includes a plurality of transistor cells, each cell has a source and a drain region disposed on opposite sides of a gate region in the semiconductor substrate. A gate electrode is formed as an electrode layer on top of the gate region for controlling an electric current transmitted between the source and the drain regions. The gate electrode layer disposed on top of the semiconductor substrate is patterned into a wave-like shaped stripes for substantially increasing an electric current conduction area between the source and drain regions across the gate.
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申请公布号 |
US2007295996(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20060473938 |
申请日期 |
2006.06.23 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
MALLIKARARJUNASWAMY SHEKAR |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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