| 摘要 |
PROBLEM TO BE SOLVED: To solve a matter that, although the amount and distribution of hydrogen contained in the first electrode 15 of a thin film diode (TFD) element are suitable for affecting the operational characteristics of a TFD element employing that metal, e.g. the insulation resistance of the TFD element can be raised by increasing the amount of hydrogen in the first electrode 15, the hydrogen scatters to the outside of the TFD element as time elapses when the amount of hydrogen in the first electrode 15 is increased to cause unstable electrical characteristics of the TFD element, and it is difficult to control the amount of hydrogen because the hydrogen is introduced by exposing a Ta film after deposition to the atmosphere and absorbing hydrogen in the atmosphere. SOLUTION: A first scattering prevention film 5 covering a first electrode 15 is removed in decompressed atmosphere. During this process, hydrogen stored in the first electrode 15 is discharged to the outside of the first electrode 15. After the hydrogen is discharged, hydrogen is adsorbed anew without exposing the first scattering prevention film to the atmosphere, and a second scattering prevention film 6 is formed thus providing a TFD element in which the amount of built-in hydrogen is controlled. COPYRIGHT: (C)2008,JPO&INPIT |
