| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus having a wide dynamic range which can improve the linearity of an S<SB>1</SB>signal and improve a saturation level, and to provide a field effect transistor applied to this device. SOLUTION: The field effect transistor has a configuration with a gate electrode 60 formed therein via a gate insulating film 50 on a channel forming region of a first conductive first semiconductor layer 11 having the channel forming region with a pair of second conductive second semiconductor layers (40, 41) formed on an uppermost layer of the first semiconductor layer 11 at both sides of the gate electrode 60, and with a second conductive third semiconductor layer 43 formed so as to be connected to the second semiconductor layer 40 in the first semiconductor layer 11 in a predetermined depth on a lower part of the channel forming region. Further, this transistor is applied to an amplification transistor to form the solid-state imaging apparatus. COPYRIGHT: (C)2008,JPO&INPIT |
