发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor surely obtaining a resistor having an accurate resistance value, regarding the semiconductor device loading a polysilicon resistor as an element. SOLUTION: In the semiconductor device, the polysilicon resistor in the semiconductor device loading the polysilicon resistor comprises a polysilicon layer (113) formed in a desired shape, and an impurity diffusion layer (114) formed so as to diffuse impurities to the side inner than the shape of the polysilicon layer (113) in the polysilicon layer (113). COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007335580(A) 申请公布日期 2007.12.27
申请号 JP20060164820 申请日期 2006.06.14
申请人 MITSUMI ELECTRIC CO LTD 发明人 WATANABE SADAHISA;KIYONO MITSURU
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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