| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the deterioration of the withstand voltage to dispersion in process is small. SOLUTION: The semiconductor device is divided into an element region 50 and a terminal section 60, a super junction structure section having a boundary region 52 where the depths of a first semiconductor pillar region 3 and a second semiconductor pillar region 4 adjacent to a high resistance semiconductor layer 12 gradually become shallower towards the terminal section 60 is provided between an element central region 51 of the element region 50 and the terminal section 60, and the boundary region 52 is positioned closer to the terminal section 60 side than a control electrode 8. COPYRIGHT: (C)2008,JPO&INPIT |
