| 摘要 |
<p>A semiconductor optical device (1) comprises a superlattice contact semiconductor region (3) and a metal electrode (5). The superlattice contact semiconductor region (3) has a superlattice structure. The superlattice contact semiconductor region (3) includes a II-VI compound semiconductor region (7) and a II-VI compound semiconductor layer (9). The II-VI compound semiconductor region (3) contains zinc, selenium and tellurium, and the II-VI compound semiconductor layer (9) contains zinc and selenium. The metal electrode (5) is provided on said superlattice contact semiconductor region (3) and the metal electrode (5) is electrically bonded to the first II-VI compound semiconductor layer (9).</p> |
