METHOD FOR FABRICATING SPACER IN SEMICONDUCTOR DEVICE

摘要

A method for forming a spacer of a semiconductor device is provided to reduce current leakage and to improve refresh property by forming a spacer using a TaO2O5 film and a TaON film. A gate stack(110) is formed on a semiconductor substrate(100). An insulation layer(120) is formed with a tantalum oxide on the semiconductor substrate. A spacer(130) is formed to protect a sidewall of the gate stack, and to expose a bottom substrate by etching entirely the insulation layer. The gate stack is formed by using a metal gate structure. The insulation layer is made of a tantalum oxide film(Ta2O5) or a tantalum oxy nitride(TaON) film.