发明名称 Display device and electronic device using the same
摘要 In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniformity is less, and a display quality is superior is provided. Steps are formed on a substrate in advance and an amorphous silicon film is formed thereon, and then laser crystallization is conducted in a direction perpendicular to the steps.
申请公布号 US7312473(B2) 申请公布日期 2007.12.25
申请号 US20020329993 申请日期 2002.12.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOYAMA JUN;ISOBE ATSUO;SHIBATA HIROSHI;YAMAZAKI SHUNPEI
分类号 G02F1/1368;H01L29/00;G02F1/133;G02F1/167;G09F9/30;H01L21/20;H01L21/336;H01L21/77;H01L27/12;H01L27/32;H01L29/786;H01L29/94 主分类号 G02F1/1368
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