发明名称 |
Display device and electronic device using the same |
摘要 |
In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniformity is less, and a display quality is superior is provided. Steps are formed on a substrate in advance and an amorphous silicon film is formed thereon, and then laser crystallization is conducted in a direction perpendicular to the steps.
|
申请公布号 |
US7312473(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20020329993 |
申请日期 |
2002.12.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;ISOBE ATSUO;SHIBATA HIROSHI;YAMAZAKI SHUNPEI |
分类号 |
G02F1/1368;H01L29/00;G02F1/133;G02F1/167;G09F9/30;H01L21/20;H01L21/336;H01L21/77;H01L27/12;H01L27/32;H01L29/786;H01L29/94 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|