A CMOS IMAGE SENSOR INCLUDING R, G AND B PIXELS HAVING DIFFERENT THICHKNESS OF ANTI REFLECTIVE LAYERS, RESPECTLY

摘要

A CMOS(complementary metal oxide semiconductor) image sensor having an ARC(anti-reflective coating) with different thickness according to each pixel is provided to increase light receiving efficiency of a photoelectric generation part by having an ARC specialized according to each color. A first photoelectric generation part(210a) detects light of a first color to generate an electric signal. A first ARC(250a) having a first thickness is formed on the surface of the first photoelectric generation part. A second photoelectric generation part(210b) detects light of a second color to generate an electric signal. A second ARC(250b) is formed on the surface of the second photoelectric generation part, having a second thickness greater than the first thickness. A third photoelectric generation part(210c) detects light of a third color to generate an electrical signal. A third ARC(250c) is formed on the surface of the third photoelectric generation part, having a third thickness greater than the second thickness.