| 摘要 |
A memory cell programmed using a temperature controlled set pulse is provided to program the memory cell with one selected state of more than two status by applying the temperature controlled set pulse to the memory cell. A memory device(100) includes a phase change memory cell(106a-106d) and a circuit. The circuit programs the memory cell into one state selected among more than two states, by applying a temperature control setting pulse to the memory cell. The temperature control setting pulse includes a first phase, a second phase and a third phase. In the first phase, a current of the setting pulse increases. In the second phase, the current of the setting pulse maintains a constant level when a predetermined temperature of the memory cell is reached. In the third phase, the current of the setting pulse decreases to zero if the current maintains the constant level during the predetermined period.
|
