| 摘要 |
<p>A method for forming a metal pattern in a semiconductor device is provided to avoid a defect of uniformity and coating of an ARC(anti-reflective coating) by forming metal layer on a hard mask layer pattern and by forming an ARC after a planarization etch process is performed to remove a step. A first metal layer is formed on the surface of a semiconductor substrate(100) having a first hard mask layer pattern(115b). A planarization etch process is performed by a CMP process until the first hard mask layer pattern is exposed. An ARC and a photoresist layer pattern are formed on the resultant structure. The ARC and the first hard mask layer pattern are etched by using the photoresist layer pattern as a mask to form a second hard mask layer pattern(155b), and the photoresist layer pattern and the ARC are eliminated. After a second metal layer is formed on the resultant structure, a planarization etch process is performed by a CMP process until the second hard mask layer pattern is exposed so that a metal layer pattern is formed. The first and second metal layers can be made of an aluminum, tungsten or polysilicon layer.</p> |
