METHOD OF FORMING A LAYER OF MATERIAL USING AN ATOMIC LAYER DEPOSITION PROCESS

摘要

Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.