| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III-N field effect device such as HEMT, MOSHFET and MISHFET, containing for example two active layers such as GaN/AlGaN layer. SOLUTION: In the method of manufacturing this type of device of enhancement mode, in other words, a normally-off device, a passivation layer is provided on an AlGaN layer. A hole is etched in the passivation layer and a gate contact is formed in the hole. Meanwhile, a source and drain are directly formed on the passivation layer. The characteristics of an active layer and/or gate is so selected that no two-dimensional electron gas layer is present under the gate when a zero voltage is applied to the gate. The invention also relates to a device having that characteristics. COPYRIGHT: (C)2008,JPO&INPIT
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