发明名称 AMPLIFIER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an amplifier circuit having excellent NF characteristics even in a high frequency region. SOLUTION: The amplifier circuit is provided with an emitter-grounded first bipolar transistor and a bias circuit of the first bipolar transistor. The bias circuit is provided with a second bipolar transistor constituting a current mirror circuit with the first bipolar transistor, a first resistor connected to respective bases of the first bipolar transistor and the second bipolar transistor, and a third bipolar transistor whose emitter is connected to the respective bases of the first bipolar transistor and the second bipolar transistor through the first resistor and the base is connected to the collector of the second bipolar transistor. The first bipolar transistor amplifies signals inputted to the base of the first bipolar transistor and outputs them from the collector of the first bipolar transistor. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007329831(A) 申请公布日期 2007.12.20
申请号 JP20060161067 申请日期 2006.06.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ZAMAN IQBAL KAZI;ITO JUNJI;MASAGAKI TOSHIHIRO
分类号 H03F1/26 主分类号 H03F1/26
代理机构 代理人
主权项
地址