NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a MONOS non-volatile semiconductor storage device which can be down-scaled in the direction of a word line, and also to provide its manufacturing method. SOLUTION: The memory cell array of the nonvolatile semiconductor storage device is equipped with; a diffusion layer bit line 5 provided in a semiconductor substrate 1; charge trapping layers 3 which are provided on the semiconductor substrate 1 and the diffusion bit line 5; a lower gate electrode 31 provided on the charge trapping layer 3; a gate electrode 6 provided on the lower gate electrode 31; a metal bit line 11 provided above the diffusion layer bit line 5; and a contact plug 10 which connects the diffusion layer bit line 5 and the metal bit line 11 together. The contact plug 10 is formed of the same material with the gate electrode 6 and provided on the diffusion layer bit line 5 in a self-aligned manner. COPYRIGHT: (C)2008,JPO&INPIT