| 摘要 |
A storage device including a ferroelectric memory cell array including a plurality of memory cells; sense amplifiers connected to the bit lines and selected by a column address; an internal counter able to generate the column address; and a control part controlling data access, wherein the control part accesses data by a first processing of reading out a plurality of words of data from memory cells of a word line and a plate line selected according to a row address and storing it in the sense amplifiers, a second processing of selecting sense amplifiers from the column address and inputting/outputting data with the outside, and a third processing of writing back the data of the sense amplifiers into the memory cells, with data being continuously input or output and transferred by repeatedly executing the second processing using the column address generated in the internal counter for a group of words read out to the sense amplifiers at the first processing, and a file storage device and a computer system utilizing such a ferroelectric memory.
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