ETCHING APPARATUS USING ION BEAM

摘要

An etching apparatus using an ion beam is provided to prevent insulation of an ion extracting electrode from being damaged by reducing an amount of polymer attached on the ion extracting electrode. An etching apparatus includes a reaction chamber(10) in which a reaction gas is ionized by a high-frequency power to generate plasma, a porous ion extracting electrodes(12) extracting an ion beam from the plasma, and a chuck(15) supporting an object to be etched by the extracted ion beam. A high-dielectric coating layer(13) is formed on a surface of the ion extracting electrode to prevent the ion extracting electrode from being damaged due to charges accumulated on the polymer which is generated in the process of extracting the ion beam.