发明名称 |
STRUCTURE AND METHOD FOR IMPLEMENTING OXIDE LEAKAGE BASED VOLTAGE DIVIDER NETWORK FOR INTEGRATED CIRCUIT DEVICES |
摘要 |
A voltage divider device includes a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region. An input voltage is coupled between the first and second gates, and an output voltage is taken from at least one of a source of the FET and a drain of the FET, wherein the output voltage represents a divided voltage with respect to the input voltage.
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申请公布号 |
US2007278582(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20070841247 |
申请日期 |
2007.08.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINE CORPORATION |
发明人 |
GOODNOW KENNETH J.;IADANZA JOSEPH A.;NOWAK EDWARD J.;STOUT DOUGLAS W. |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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