| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to implement micro-devices by forming lines of the semiconductor device narrower than the width of photoresist patterns. Photoresist patterns are formed on a semiconductor substrate(100). By etching the semiconductor substrate using the photoresist patterns as a mask, a semiconductor protrusion unit(110) is formed and then the photoresist patterns are removed. An oxide layer(200) is formed on the semiconductor substrate including the semiconductor protrusion unit. By polishing the oxide layer, an upper portion of the semiconductor extrusion unit is exposed. A trench made of the oxide layer is formed by removing the exposed semiconductor protrusion unit. Metal is deposited on the semiconductor substrate including the trench. The oxide layer for forming the trench and the metal on the oxide layer are removed such that metal lines are formed.</p> |
