| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device capable of being micronized and laminated. <P>SOLUTION: A NAND (NOT AND) type flash memory is equipped with a first laminate in which a plurality of first gate electrodes included in a plurality of first memory cells are laminated through an insulating layer, a second laminate in which a plurality of second gate electrodes included in a plurality of second memory cells are laminated through the insulating layer, first and second gate insulating films 16, respectively provided on the side surfaces of the first and second laminates while comprising a charge accumulating layer 14 therein, a first semiconductor layer 12 comprising a first pillar provided on the side surface of the first gate insulating film and a second pillar provided on the side surface of the second gate insulating film while being connected electrically to the first pillar, a first selection transistor SST connected in series to the first memory cell while being provided on the first pillar, and a second selection transistor SDT connected in series to the second memory cell while being provided on the second pillar. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
