发明名称 Charged beam exposure apparatus, charged beam control method and manufacturing method of semiconductor device
摘要 A charged beam exposure apparatus includes: a first shaping aperture provided with a plurality of rectangular openings which are different from each other in at least one of area and shape thereof; a second shaping aperture provided with a pattern having a shape corresponding to that of a pattern to be drawn onto a substrate; a charged beam generator which generates a charged beam to apply the charged beam to the first shaping aperture; a projector which projects the charged beam that has passed through an arbitrary opening of the first shaping aperture onto the second shaping aperture; a deflection unit provided between the charged beam generator and the projector to deflect the charged beam; a deflection controller which controls the deflection unit so that the opening of the first shaping aperture is selected which enables adjustments of a drawing time and a resolution conforming to requirements/specifications of the pattern to be drawn; and a demagnification projector which projects the charged beam that has passed through the second shaping aperture onto the substrate in a demagnification form.
申请公布号 US7304320(B2) 申请公布日期 2007.12.04
申请号 US20050260251 申请日期 2005.10.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAGANO OSAMU
分类号 H01J37/08 主分类号 H01J37/08
代理机构 代理人
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