发明名称 Method for reducing dimensions between patterns on a photoresist
摘要 A semiconductor manufacturing method that includes providing a substrate, providing a layer of material over the substrate, providing a layer of photoresist over the material layer, patterning and defining the photoresist layer, depositing a layer of polymer over the patterned and defined photoresist layer, wherein the layer of polymer is conformal and photo-insensitive, and etching the layer of polymer and the layer of material.
申请公布号 US7303995(B2) 申请公布日期 2007.12.04
申请号 US20030465850 申请日期 2003.06.20
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHUNG HENRY WEI-MING;TSAI SHIN-YI;LIANG MING-CHUNG
分类号 H01L21/311;G03F7/40;H01L21/027;H01L21/033;H01L21/302 主分类号 H01L21/311
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