FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a high-output field effect transistor by improving withstand voltage while adopting an embedded gate structure effective for increasing a maximum drain current. SOLUTION: The field effect transistor has at least a channel layer formed of a 3-5 compd. semiconductor containing no aluminum on a semi-insulating substrate; a gate contact layer which is formed of a 3-5 compd. semiconductor containing aluminum of≤1×1016cm-3doping concentration, and having large interband energy on it; a gate embedding layer which is formed of a 3-5 compd. semiconductor containing no aluminum of≤1×1016cm-3doping concentration on it; and a gate electrode which is embedded in the gate embedding layer, and connected with the gate contact layer. The gate embedding layer is provided with a recess which surrounds the side wall, and which has a thickness of not exposing the gate contact layer. COPYRIGHT: (C)2008,JPO&INPIT