| 摘要 |
PROBLEM TO BE SOLVED: To analyze the cause of a characteristic deterioration of MOSFET in a short time. SOLUTION: When a hysteresis phenomenon occurring in MOSFET is measured, both its ON-state voltage and OFF-state voltage are dependent on a drain voltage. The ON-state voltage and OFF-state voltage serve as factors which enable the analysis of the effect of hot carriers caused by stress (impact ionization) and trapped by a gate oxide film etc. to be performed. Therefore, the hysteresis characteristic of the MOSFET is measured for several drain voltages to specify the ON-state voltage and OFF-state voltage for each drain voltage, a transition characteristic figure is formed from the specified ON-state voltages and OFF-state voltages and from those serving as a reference, and the cause of a characteristic deterioration of the MOSFET is analyzed by obtaining an intersection of the ON-state voltage characteristic curve and the OFF-state voltage characteristic curve in the transitional characteristic figure. COPYRIGHT: (C)2008,JPO&INPIT
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