发明名称 DRAIN CONTACT HOLE MASK AND METHOD OF MANUFACTURING A FLASH MEMORY DEVICE USING THE SAME
摘要 <p>A drain contact hole mask is provided to form a drain contact hole pattern while using exposure equipment with a small numerical aperture by alternately disposing light transmission regions at regular intervals in a light blocking region. A drain contact hole mask includes a light transmission region and a light blocking region(300). A plurality of light transmission regions(320) are alternately disposed in the light blocking region to have the same center wherein the plurality of light transmission regions are separated from each other by a predetermined interval. The pitch of the light transmission regions whose partial region is overlapped can maintain an interval of B. The pitch of the alternately disposed light transmission regions can maintain an interval of C which is twice as long as the interval B.</p>
申请公布号 KR20070113495(A) 申请公布日期 2007.11.29
申请号 KR20060046437 申请日期 2006.05.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SANG MIN
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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