发明名称 |
Stress Measuring Method And Instrument |
摘要 |
The stress of a sample semiconductor wafer is detected with high accuracy in the form of an absolute value without rotating the sample or the entire optical system. A laser light R is subjected to photoelastic modulation in a PEM 6 to generate a birefringence phase difference and then it is passed through first and second quarter wavelength plates and detected. This reference signal data is stored in a signal processor. The laser light R of polarized wave subjected to photoelastic modulation in the PEM 6 and passed through the quarter wavelength plate has a birefringence phase difference and passes through a semiconductor wafer D having residual stress. When it is passed through a test piece, the direction of the stress of the test piece is detected when the angle between the laser light R and a linear polarization light is 0 and 90 degrees. The transmitted electric signal is delivered to an analog/digital converter 16 , and the signal from which is input to a signal processor thus generating transmission signal data. The signal processor reads out the stored reference signal data and the transmission signal data and calculates there from a reference birefringence phase difference and the absolute values of the birefringence phase difference.
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申请公布号 |
US2007273865(A1) |
申请公布日期 |
2007.11.29 |
申请号 |
US20040586148 |
申请日期 |
2004.03.05 |
申请人 |
NIITSU YASUSHI;ICHINOSE KENSUKE;GOMI KENJI |
发明人 |
NIITSU YASUSHI;ICHINOSE KENSUKE;GOMI KENJI |
分类号 |
G01B11/16;G01L1/00;G01L1/24;G01L5/00 |
主分类号 |
G01B11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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