发明名称 Method for forming passivating films on semiconductor bodies
摘要 <p>A polysiloxane is formed in situ on a semiconductor by the copolymerization of a predetermined mixture of poly-functional organosilicon monomers, e.g. having proportions by weight of 1-5% monofunctional, 5-40% of difunctional and the balance trifunctional monomers. In a first example hydrolysed methyl triethoxysilane in toluene, diphenyl silandiol and hexamethyl disiloxane are used together with N-phenyl-2-naphthylamine as an oxidation inhibitor and in a second example, hydrolysed ethyl triethoxy silane in carbon disulphide and hydrogen peroxide as catalyst and disproportionating agents are used. Polymerization is carried out partially by heating to 80 DEG -100 DEG C. for 2-10 mins. with final curing at 150 DEG -200 DEG C. for at least 6 hours. 2-naphthyl phenyl amine, N-phenyl-2-naphthylamine, phenylene diamine and other amines or dihydroxy benzenes are stated to be suitable antioxidants and lead or zinc octoate, carbon disulphide, hydrogen peroxide and organoperoxides to be suitable catalysts. In general, the silanes utilized as monomers have the formula RnSiXn-4 where X is a chemically active group such as halogen, hydroxy, alkoxy or amino and R is theyl, phenyl, epoxy, vinyl or nitrile, the monomer being hydrolysed prior to use if necessary. Specifications 893,859 and 925,085 are referred to.</p>
申请公布号 GB925084(A) 申请公布日期 1963.05.01
申请号 GB19590025029 申请日期 1959.07.21
申请人 PACIFIC SEMICONDUCTORS, INC. 发明人
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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