| 摘要 |
PROBLEM TO BE SOLVED: To improve the etching uniformity of a silicon film by surely removing remaining objects after etching a metal film, and to prevent the generation of the etching residue. SOLUTION: A microcrystal silicon film 2 and a chromium film 3 are formed in sequence on an insulating film 1 as a base, and they are wet-etched while a resist 4 is being used as a mask, so as to pattern the chromium film 3. Next, the microcrystal silicon film 2 wherein remaining objects 5 exist is exposed in a plasma using a mixing gas containing chlorine gas and oxygen gas, and the remaining objects 5 on the surface of the microcrystal silicon film 2 are selectively etched for removal. Then, the microcrystal silicon film 2 is dry-etched. COPYRIGHT: (C)2008,JPO&INPIT |
