| 摘要 |
PROBLEM TO BE SOLVED: To eliminate variation in characteristics of semiconductor elements irrespective of difference in wafer lots or wafers in a manufacturing process, to eliminate the need for management for reducing the variation in characteristics of parallel-connected semiconductor elements, in addition, to fully exhibit performance of the individual parallel-connected semiconductor elements, and to improve performance of an entire semiconductor module constituted of the semiconductor elements. SOLUTION: An electric property (threshold voltage) varying by fixed positive charge in a gate oxide film of a power transistor 20 (semiconductor element) is measured. Based on the results of the measured electric property, processing for generating the fixed positive charge in the gate oxide film of a power transistor 30 (irradiation of X-rays from an X-ray source 2) is applied to change the electric property of the power transistor 30 to be within a predetermined range. COPYRIGHT: (C)2008,JPO&INPIT
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