| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical modulator, having a nin-type heterostructure that is superior in reliability and capable of significantly reducing the propagation loss of light, while having ample voltage breakdown characteristics. SOLUTION: The semiconductor optical modulator has: an n-type InP clad layer 12, an InGaAsP clad layer 13, a core layer 14 comprising an InGaAlAs quantum well structure having electro-optical effects, an InGaAsP clad layer 15, an undoped InP clad layer 16, a p-type In<SB>0.4</SB>Al<SB>0.6</SB>As<SB>0.9</SB>Sn<SB>0.1</SB>barrier layer 17, and an n-type InP clad layer 18 deposited successively; the band gap of the clad layer 13 and the clad layer 15 is larger than the band gap of the core layer 14; the band cap of the clad layer 12 and the clad layer 16 is larger than the band gap of the clad layer 13 and clad layer 15; and the barrier layer 17 is formed of p-type In<SB>0.4</SB>Al<SB>0.6</SB>As<SB>0.9</SB>Sb<SB>0.1</SB>; and the clad layer 18 is formed of n-type InP. COPYRIGHT: (C)2008,JPO&INPIT
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