| 摘要 |
A semiconductor memory and a refresh cycle control method that reduce a standby current by properly changing a refresh cycle according to the temperature of the semiconductor memory. A temperature detection section (101) detects the temperature of the semiconductor memory. A cycle change control section (102) sends a cycle change signal for changing a refresh cycle when the temperature of the semiconductor memory reaches a predetermined cycle change temperature. A refresh timing signal generation section (103) generates a refresh timing signal and changes the cycle of the refresh timing signal in response to the cycle change signal. A constant current generation circuit (104) generates an electric current for generating the refresh timing signal. A low-temperature constant current setting circuit (105) designates the level of the electric current generated in the case that the temperature of the semiconductor memory is lower than or equal to the cycle change temperature. A high-temperature constant current setting circuit (106) designates the level of the electric current generated in the case that the temperature of the semiconductor memory is higher than the cycle change temperature.
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