发明名称 |
Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices |
摘要 |
Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.
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申请公布号 |
US7298594(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20040862323 |
申请日期 |
2004.06.08 |
申请人 |
HITACHI, LTD. |
发明人 |
ONOGI TOSHIYUKI;ICHIMURA MASAHIKO;HASHIZUME TOMIHIRO |
分类号 |
G11B5/127;G01R33/09;G11B5/33;G11B5/37;G11B5/39;G11C11/14;G11C11/15;G11C19/08;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
G11B5/127 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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