| 摘要 |
A method for producing a semiconductor wafer with a profiled edge is provided to enhance accuracy and a yield in a process for treating a shape of a semiconductor wafer separated from a crystal. A separation process is performed to separate a semiconductor wafer from a crystal. An edge profile generating process is performed to obtain a corresponding profile(2) in a constant ratio with respect to a target profile by processing mechanically an edge. A mechanical treatment process is performed to reduce a thickness of the semiconductor wafer. An edge profile treatment process is performed to obtain the target profile by processing mechanically the edge. In the edge profile generating process, an elliptic semiconductor wafer is changed to a circular semiconductor wafer.
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