发明名称 ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF FABRICATING SAME
摘要 A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
申请公布号 US2007262345(A1) 申请公布日期 2007.11.15
申请号 US20070781370 申请日期 2007.07.23
申请人 GAUTHIER ROBERT J JR;LI JUNJUN;MITRA SOUVICK;MOUSA MAHMOUD A;PUTNAM CHRISTOPHER S 发明人 GAUTHIER ROBERT J.JR.;LI JUNJUN;MITRA SOUVICK;MOUSA MAHMOUD A.;PUTNAM CHRISTOPHER S.
分类号 H01L21/02;H01L29/66 主分类号 H01L21/02
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