| 摘要 |
A composition for a hard mask is provided to improve the uniformity of a pattern formed in a lithographic process and etching selectivity, and to realize etching selectivity similar to or higher than the etching selectivity of a photoresist layer, and quite smaller than the etching selectivity of the underlying layer. A composition for a hard mask comprises: a compound represented by the following formula 1; a melamine derivative; a thermal acid generator; and a solvent. In formula 1, R1-R6 are the same or different and represent H or a substituted or non-substituted linear or branched C1-C5 alkyl group, A is a halogen atom, and each of m and n represents an integer of 20-1,000. The compound represented by formula 1 has a molecular weight of 1,000-200,000.
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