| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device which suppresses an occurrence of variations in a pattern line width and the like formed by ion implantation while being able to unite an ion implantation process, a method for manufacturing a solid-state imaging device, and the solid-state imaging device, wherein the process is curtailed, a throughput is enhanced, a production cost is reduced and a production yield is enhanced. SOLUTION: This method for manufacturing the semiconductor device 100 contains the step of forming a mask having an opening in a desired ion implantation area on a semiconductor substrate upon the ion implantation onto the semiconductor substrate, and performing the ion implantation from the opening of the mask onto the semiconductor substrate. In the method for manufacturing the semiconductor device 100, the ion implantation is performed at a plurality of times from the opening under ion implantation conditions different from each other by use of the same mask, and an impurity concentration profile having a plurality of peaks P1, P2 is formed in a depth direction of the semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT
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