| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the existence of a short circuit failure, short circuit resistance, open circuit resistance, and the dimensional margin of defective conduction resistance can be inspected, and to provide its inspection method. SOLUTION: In a semiconductor device comprising a TEG group composed of one or more TEGs each having wiring 162<SB>1</SB>, 162<SB>2</SB>and 162<SB>3</SB>at ground potential and wiring 161<SB>1</SB>, 161<SB>2</SB>and 161<SB>3</SB>at floating potential, the width and interval of the wiring are identical in each TEG, but one of the width and interval is different between different TEGs. The existence of wiring defective regions in the TEG of the semiconductor device is detected by a potential contrast method based on the amount of secondary electrons emitted from the TEG by irradiating each TEG with an electron beam. COPYRIGHT: (C)2008,JPO&INPIT
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