METHOD OF FORMING FINE PATTERN USING AZOBENZENE-FUNCTIONALIZED POLYMER AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE METHOD OF FORMING FINE PATTERN

摘要

Provided is a method of forming a fine pattern having a pattern dimension of 1 mum or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.