Back Junction Solar Cell and Process for Producing the Same

摘要

The present invention can finely arrange p⁺-type diffusion layers and n⁺-type diffusion layers. A p⁺-type diffusion layer 2 and an n⁺-type diffusion layer 3 are simultaneously formed on a back surface 1 a of a semiconductor substrate 1 in a state that the p⁺-type diffusion layer 2 and the n⁺-type diffusion layer 3 are arranged close to each other, and a back surface la side of the semiconductor substrate 1 on which outer end portions of the p⁺-type diffusion layers 2 and the n⁺-type diffusion layers 3 are brought into contact with each other is removed thus separating the p⁺-type diffusion layer 2 and the n⁺-type diffusion layer 3 from each other and hence, the p⁺-type diffusion layer 2 and the n⁺-type diffusion layer 3 can be separately arranged in a state that the p⁺-type diffusion layer 2 and the n⁺-type diffusion layer 3 are arranged close to each other.