| 摘要 |
841,158. Semi-conductor devices. SIEMENSSCHUCKERTWERKE. A. G. Oct. 29, 1956 [Oct. 29, 1955], No. 33014/56. Class 37. A junction rectifier or transistor comprises a semi-conductor member 1, Figs. 1 and 2, having a collector electrode 2 on one surface and a number of concentric base and emitter electrodes 3-8 on the opposite surface, the alternate concentric electrodes 3, 5, 7 forming an emitter group while the remaining electrodes 4, 6, 8 function as a base group. The semiconductor member may comprise germanium, silicon or a binary compound such as aluminium phosphide, aluminium antimonide or gallium arsenide. In use, the various emitter-base systems may be connected in parallel to form a common emitter and base connection, or they may operate at different control potentials. The rectifier or transistor may be produced by the use of a graphite mould, Fig. 4, comprising upper and lower parts 9, 10 having appropriate recesses into which are fitted pre-shaped metal electrodes and the semi-conductor member. The mould 11, Fig. 6, is mounted in a non- magnetic frame 16 and is housed within a gas filled or evacuated furnace housing 16 on a heated plate 12. During heat treatment the components contained in the mould are subjected to pressure by an iron weight 14 and a spring 15, the pressure being reduced in the course of the alloying process by energising a magnet system comprising a core 17, the weight 14 and an energising coil 18. |
