| 摘要 |
FIELD: nuclear physics and radiochemistry; cyclotron targets of thin-walled radioactive radiation sources; various technologies using thin lanthanide oxide films. ^ SUBSTANCE: proposed method for producing thin actinide and lanthanide layers depends on their sublimation from titanium or zirconium metal surfaces at temperature of 800- 1 300 °C in inert atmosphere (for instance helium). In the process actinide or lanthanide elements precipitate in the form of oxides onto substrate made of different heat-resistant material, such as tantalum, molybdenum, tungsten, platinum, stainless steel, quartz glass, aluminum oxide or graphite film; substrate is not cooled down and precipitation takes place due to interaction with surface. Under such conditions all investigated lanthanides and actinides, including those nonvolatile in elementary state at given temperature, were sublimated and settled down onto substrate; for conducting process with the latter in macroquantity state source material is doped with small amount of ion chlorides to ensure more effective chemical transport reaction. Proposed device used in the process has titanium or zirconium crucibles which tightly close substrate whereon mentioned elements precipitate; if source of definite shape is requires, substrate is covered with titanium or zirconium mask with hole of desired shape and reaction area is isolated by tantalum as well as by titanium and zirconium high-temperature getters cleaning inert gas being admitted. ^ EFFECT: ability of preparing thin and uniform high-quality lanthanide and actinide layers. ^ 12 cl, 5 dwg, 1 tbl, 7 ex |
