发明名称 |
Preventing dosage drift with duplicate dose integrators |
摘要 |
A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.
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申请公布号 |
US2007257210(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20060416874 |
申请日期 |
2006.05.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG JIH-HWA;CHEN OTTO;CHIEN FANG-CHI;LEE TUNG-LI;CHEN PU-FANG |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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