| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition simultaneously satisfying high sensitivity, high resolution, excellent pattern shape and line edge roughness in micro-machining of a semiconductor device using high energy rays, X rays, electron rays or EUV light. <P>SOLUTION: The positive resist composition comprises a compound generating a compound of a specific structure by action of active light or radiation, and the compound of the specific structure containing a group generating an alkali-soluble group by the action of an acid. A pattern forming method using the resist composition is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
