NONVOLATILE MEMORY CELL, SEMICONDUCTOR DEVICE USING IT, AND METHOD OF FORMING NONVOLATILE MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a non-volatilized memory cell, and a semiconductor device capable of reducing the operating currents of variable resistor elements and improving the reliability, and to provide a method of forming the nonvolatile memory cell.

SOLUTION: The nonvolatile memory cell is built by using a variable resistance element which is composed of a variable resistance layer 11 changing its resistance by the applied voltage and a first electrode 104 and a second electrode 102 sandwiching the variable resistance layer 11; and a capacitor 12 which has an insulator layer 105 between the first electrode 104 or the second electrode 102 and the third electrode 106. By applying a voltage to the capacitor to break it down, the resistance component of the capacitor is made almost the same as the lowered resistance of the variable resistance element.

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